By Stephen E Saddow, Anant Agarwal
Examine the most recent advances in SiC (Silicon Carbide) expertise from the prime specialists within the box with this new state of the art source. The publication is your unmarried resource for in-depth info on either SiC gadget fabrication and system-level functions. This entire reference starts off with an exam of ways SiC is grown and the way defects in SiC progress can impact operating units.
Key concerns in selective doping of SiC through ion implantation are coated with distinctive concentrate on implant stipulations and electric activation of implants. SiC purposes mentioned contain chemical sensors, motor-control parts, high-temperature fuel sensors, and high-temperature electronics. via slicing during the arcane information and jargon surrounding the hype on SiC, this booklet offers a good evaluate of today’s SiC expertise and indicates you ways SiC may be followed in constructing tomorrow’s purposes.
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Tobias et al. investigated Pt-gate 6H-SiC Schottky diodes with an interfacial layer of 1-nm Ta or 10-nm TaSix . Both n-type and p-type diodes showed a gas response to hydrogen at 400–600°C. It was postulated that the gas response to hydrogen observed in the forward direction is mainly due to a change in the resistance of the gate contact. Nakagomi et al. have studied the stability of a Pt-thin oxide-SiC diode by repeatedly heating and cooling the device . The stability of the I-V and C-V characteristics of the diode were good during exposure to an ambient of H2 (20%) or O2 (20%) at a temperature lower than 300°C.